IBM Claims 5nm Nanosheet Breakthrough - EE Times - discu.eu

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IBM Claims 5nm Nanosheet Breakthrough http://www.eetimes.com/document.asp?doc_id=1331850 21 comments 6/6/2017

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Samsung Plans 3nm Gate-All-Around FETs in 2021 - EE Times https://www.eetimes.com/document.asp?doc_id=1333318 6 comments

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